t4 - lds - 0236 - 1, rev . 1 (111960) ?2011 microsemi corporation page 1 of 5 2N2944AUB C 2n2946aub available on commercial versions pnp silicon small signal transistor qualified per mil - prf - 19500/382 qualified levels : jan, jantx, and jantxv description this 2N2944AUB through 2n2946aub pnp s ilicon transistor device is military qualified up to a jantxv level for high - reliability applications. microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. ub package also available in : to - 46 (to - 206ab) (axial leaded) 2n2944a C 2n2946a important: for the latest information, visit our website http://www.microsemi. com . features ? surface mount equivalent of jedec registered 2n2944 a thru 2n2946 a series . ? low - profile ceramic surface mount package. ? jan, jantx, and jantxv qualification per mil - prf - 19500/382 available. ? rohs compliant versions available (commercial gr ade only). applications / benefits ? small l ightweight package . ? esd to class 3 p er mil - std - 750, method 1020. maximum ratings @ +25 o c unless otherwise noted. parameters/test conditions symbol value unit junction and storage temperature t j and t stg - 65 to +200 o c thermal resistance junction - to - ambient (2) r ? ja 435 o c /w thermal r esistance surface mount j unction to s older p oint r ? j sp 90 o c /w collector current (dc) i c - 100 ma emitter to base voltage (static), 2N2944AUB collector open 2n2945aub 2n2946aub v ebo - 15 - 25 - 40 v collector to base voltage (static), 2N2944AUB emitter open 2n2945aub 2n2946aub v cbo - 15 - 25 - 40 v collector to emitter voltage (static), 2N2944AUB b ase open 2n2945aub 2n2946aub v ceo - 10 - 20 - 35 v emitter to collector voltage 2N2944AUB 2n2945aub 2n2946aub v eco - 10 - 20 - 35 v total power dissipation, all terminals @ t a = +25 o c (1) p t 400 mw total power dissipation, all terminals @ t sp = +25 o c p t 800 mw notes : 1. derate linearly 2.30 mw / o c above t a = +25 o c. 2. t a = +55c for ub on printed circuit board (pcb), pcb = fr4 .0625 inch (1.59 mm) 1 - layer 1 oz cu, horizontal, still air, pads (ub) = .034 inch (0.86 mm) x .048 inch (1.22 mm), r ja with a defined thermal resistance condition included is measured at p t = 400 mw . msc C lawrence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com downloaded from: http:///
t4 - lds - 0236 - 1, rev . 1 (111960) ?2011 microsemi corporation page 2 of 5 2N2944AUB C 2n2946aub mechanical and packaging ? case: ceramic . ? terminals: gold p lating over n ickel under - plate. rohs compliant m atte/ t in available on commercial grade only. ? marking: part number, date code, manufacturers id. ? t ape & reel option: s tandard per eia - 418d . consult factory for quantities. ? weight: < 0.04 grams . ? see p ackage d imensions on last page. part nomenclature jan 2n2944 a ub (e3) reliability level jan = jan level jantx = jantx level jantxv = jantxv level blank = commercial jedec type number (s ee e lectrical characteristic s t able ) rohs compliance e3 = rohs compliant ( available on commercial grade only ) blank = non - ro hs compliant surface mount package symbols & definitions symbol definition i b base current (dc) . i e emitter current (dc) . v cb collector to base voltage (dc) . v eb emitter to base voltage (dc) . v ( br ) minimum breakdown voltage: the minimum volta ge the device will exhibit at a specified current. downloaded from: http:///
t4 - lds - 0236 - 1, rev . 1 (111960) ?2011 microsemi corporation page 3 of 5 2N2944AUB C 2n2946aub electrical characteristics @ 25 o c unless otherwise noted. characteristic symbol min. max. unit of f characteristics: collector - emitter breakdown voltage i c = -1 0 a 2n2944a ub 2n2945a ub 2n2946a ub v (br) ceo - 10 - 20 - 35 v emitter - collecto r breakdow n voltage i e = -1 0 a, i b = 0 2n2944a ub 2n2945a ub 2n2946a ub v (br) eco - 10 - 20 - 35 v collector - base cutoff current v cb = - 15 v v cb = - 25 v v cb = - 40 v 2n2944a ub 2n2945a ub 2n2946a ub i cbo 10 10 10 a emitter - base cutoff current v eb = - 12 v v eb = - 20 v v eb = - 32 v 2n2944a ub 2n2945a ub 2n2946a ub i ebo - 0.1 - 0.2 - 0.5 a on characteristic s: (1) forward - current transfer ratio i c = - 1. 0 ma , v ce = - 0. 5 v 2n2944a ub 2n2945a ub 2n2946a ub h fe 100 70 50 forward - current transfer ratio (inverted i e = - 200 a, v ec = - 0. 5 v connection) 2n2944a ub 2n2945a ub 2n2946a ub h fe( inv ) 50 30 20 emitter - collecto r offse t voltage i b = - 200 a, i e = 0 i b = - 1. 0 ma , i e = 0 i b = - 2. 0 ma , i e = 0 2n2944a ub 2n2945a ub 2n2946a ub 2n2944a ub 2n2945a ub 2n2946a ub 2n2944a ub 2n2945a ub 2n2946a ub v ec( ofs ) - 0.3 - 0.5 - 0.8 - 0.6 - 1.0 - 2.0 - 1.0 - 1.6 - 2.5 mv dynami c characteristics: emitter - collecto r on - state resistance i b = - 100 a , i e = 0, i e = 10 0 a ac ( rms ) f = 1. 0 kh z i b = - 1. 0 ma , i e = 0, i e = 10 0 a ac (rms ) f = 1. 0 kh z 2n2944a ub 2n2945a ub 2n2946a ub 2n2944a ub 2n2945a ub 2n2946a ub r ec (on) 10 12 14 4.0 6.0 8.0 ? magnitude of small - signal forward current transfer ratio i c = - 1. 0 ma , v ce = - 6.0v , f = 1. 0 mh z 2n2944a ub 2n2945a ub 2n2946a ub |h fe | 15 10 5.0 55 55 55 output capacitance v cb = - 6. 0 v, i e = 0, 100 khz f 1.0 mhz c obo 10 pf inpu t capacitance v eb = - 6. 0 v, i c = 0, 10 0 kh z f 1.0 mhz c ibo 6.0 pf (1) pulse test: pulse width = 300 s, d ut y c ycl e 2.0%. downloaded from: http:///
t4 - lds - 0236 - 1, rev . 1 (111960) ?2011 microsemi corporation page 4 of 5 2N2944AUB C 2n2946aub graphs t a ( o c) ambient temperature figure 1 C temperature - power derating curve (r ? ja ) t sp ( o c) solder pad temperature figure 2 C temperature - power derating curve (r ? jsp ) maximum dc operation rating (mw ) maximum dc operation rating (mw ) downloaded from: http:///
t4 - lds - 0236 - 1, rev . 1 (111960) ?2011 microsemi corporation page 5 of 5 2N2944AUB C 2n2946aub package di mensions symbol dimensions note symbol dimensions note inch millimeters inch millimeters min max min max min max min max bh .046 .056 1.17 1.42 ls1 .035 .039 0.89 0.99 bl .115 .128 2.92 3.25 ls2 .071 .079 1.80 2.01 bw .085 .108 2.16 2 .74 lw 0.16 0.24 0.41 0.61 cl .128 3.25 r .008 0.20 cw .108 2.74 r1 .012 0.31 ll1 .022 .038 0.56 0.97 r2 .022 .056 ll2 .017 .035 0.43 0.89 notes: 1 . dimen sio ns are in in ch es. 2 . m illim eters are gi ven for ge ne ral in for ma t io n onl y. 3 . hat che d areas on pack ag e deno te metal li zed areas. 4 . pad 1 = b ase , pad 2 = emi tt er, pad 3 = c ol l ec tor, pad 4 = s hi e ldi ng c on n ec ted to the li d. 5 . in ac co rd an ce wi th asme y 14 .5m, diame ters are eq uival en t to x sy mbolog y. downloaded from: http:///
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